1N306 germanium diode ? 2014 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings roa d, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 01/2014 parameter symbol min. max. units peak inverse voltage (repetitive), measured @ i r = 1ma piv -- 1 5 volts peak forward surge current non - repetitive, t=1s i fsm -- 0.5 amps peak forward surge current repetitive i fsr -- 1 00 ma average rectified forward current i o -- ma op erating and storage temperature range t j /t stg - 55 + 75 c parameter test conditions symbol min. max. units forward voltage drop i f = 5.0ma v f -- 1.0 volts reverse leakage v r = 10 volts i r -- 2 a v r = 50 volts i r -- a breakdown voltage i r = 1.0 ma piv 65 -- volts abstract the 1N306 is a highly popular glass passivated germanium diode that features a low leakage current, flat junction capacitance, and high mechanical strength. this device is recommended for applications such as am/fm detectors, ratio detectors, fm discrimi nators, tv audio detectors, rf input p robes, and tv video detectors. the 1N306 can also be used in many more am, fm, and tv - if applications, replacing point contact devices. absolute maximum ratings electrical characteristics mechanical dimensions do - 7 t amb = 25c t amb = 25c
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